Plenary Speakers
Pierre Petroff (UCSB)
"Molecular Beam Epitaxy: Then, Now and Tomorrow."
Hideo Ohno (Tohoku University)
"Ferromagnetic III-V Semiconductor Spintronics"
Nicolas Grandjean (EPFL)
"Semiconductor microcavity: when light and matter behave as one"
Invited Speakers
Mon B1.1 |
Growth and characterization of C60/GaAs interfaces and C60 doped GaAs Jiro Nishinaga |
Tue A1.1
|
Nucleation and growth of collector-induced and self-induced GaN nanowires - a comparison Lutz Geelhaar |
Tue B1.5 |
MBE growth of VCSELs for high volume applications Roland Jäger |
Tue A2.1 |
III-V nanowires fabricated with modulated fluxes: a method to investigate the chronology of their growth Fauzia Jabeen |
Tue B2.4 |
Spin Dynamics of Mn in Nanostructures Joel Cibert |
Tue B3.1 |
Mechanical to electrical energy transduction using a micromechanical 2DES cantilever Hiroshi Yamaguchi |
Wed A1.1 |
Formation and Application of Patterned III-V Nanopillar Arrays Diana Huffaker |
Wed A2.1 |
Wide-band emissions from highly stacked quantum dot structure grown using strain-compensation technique Kouichi Akahane |
Wed B2.4 |
Spin Hall effects in HgTe Quantum Well Structures Christoph Brüne |
Wed C3.1 |
Universal behavior of interface composition profiles in MBE grown III-V heterostructures Esperanza Luna |
Thu A1.1 |
New insights into the chemistry and kinetics of interface and surface processing during the MBE growth of III nitrides exploiting real-time spectroscopic ellipsometry Maria Losurdo |
Thu A2.1 |
Epitaxial systems combining oxides and semiconductors: monolithic integration of functional oxides and III-V on silicon Bertrand Vilquin, Guillaume Saint-Girons |
Thu B2.4 |
Metastable II-VI sulphides: growth, characterization and stability Kevin Prior |
Thu B3.1 |
Polarization-Engineered Nitride Heterostructure Devices: Tunneling & Doping Debdeep Jena |
Thu B3.4 |
Very high DC and RF performance of ultra-thin AlN/GaN HEMT structures grown by plasma-assisted MBE Amir Dabiran |
Fri A1.1 |
Routes towards III-V based devices on 200 mm silicon wafers Mirja Richter |
Fri B1.5 |
ZnSe-based lasers and laser diode converters Sergey Ivanov |
Fri A2.1 |
MBE - enabling technology beyond Si CMOS Mingweih Hong |